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NTD95N02RT4G

Part No NTD95N02RT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 12A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 21nC @ 4.5V
Max Input Capacitance 2400pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 86W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060633-NTD95N02RT4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD95N02RT4G CAD Model

Description

ON Semiconductor NTD95N02RT4G Power MOSFET

The ON Semiconductor NTD95N02RT4G is a high-performance Power MOSFET designed to meet a wide range of power management and switching applications. This device is part of ON Semiconductor's Power MOSFET portfolio, which is renowned for its efficiency, reliability, and thermal performance. The NTD95N02RT4G is particularly well-suited for automotive, industrial, and computing applications where efficient power conversion is critical.

Key Features:

  • Low On-Resistance: With a low R<sub>DS(on), this MOSFET ensures minimal power loss during operation, making it highly efficient for power conversion and management tasks.
  • High Current Capability: The NTD95N02RT4G is capable of handling high continuous drain currents, making it suitable for applications requiring robust power handling.
  • Optimized Gate Charge: The device has been designed to have a low total gate charge (Q<sub>g), which translates to reduced switching losses and improved performance in high-frequency applications.
  • Robust Thermal Performance: With an excellent thermal resistance, the MOSFET can operate effectively under high temperature environments, ensuring reliability and a longer operational lifespan.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, which simplifies the design of the driving circuitry and is compatible with a wide range of controllers and processors.

Applications:

The NTD95N02RT4G is versatile and can be used in various applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications such as fuel pumps, fans, and powertrain systems
  • Switch Mode Power Supplies (SMPS)
  • Load switches

Package and Quality:

The NTD95N02RT4G comes in a compact DPAK (TO-252) package, which is suitable for surface mount technology (SMT) and occupies minimal space on a printed circuit board (PCB). ON Semiconductor ensures that their products meet rigorous quality standards, and the NTD95N02RT4G is no exception, providing both performance and reliability for your critical power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6622 $59.5980
215+ $0.5433 $116.8095
330+ $0.5264 $173.7120
455+ $0.5094 $231.7770
590+ $0.4924 $290.5160
785+ $0.4414 $346.4990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,600 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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