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NTF3055L175T1G

Part No NTF3055L175T1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 175 mOhm @ 1A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223 (TO-261)
Dimension TO-261-4, TO-261AA
Win Source Part Number 1083877-NTF3055L175T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTF3055L175
Introduction Date July 13, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTF3055L175T1G CAD Model

Description

Product Overview: NTF3055L175T1G from ON Semiconductor

The NTF3055L175T1G is a high-performance, N-channel Power MOSFET designed by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is an essential component for a wide range of electronic applications, particularly in power management and switching circuits.

Key Features

  • Low On-Resistance: The NTF3055L175T1G boasts a low on-resistance of just 175 mOhms, which enhances its efficiency by minimizing power loss during operation.
  • High Continuous Drain Current: With a continuous drain current of 3A, this MOSFET can handle significant power, making it suitable for high-demand applications.
  • High Drain-Source Voltage: The device can withstand a drain-source voltage (V<sub>DS) of up to 60V, providing a good margin for voltage spikes and surges commonly found in electronic circuits.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be easily driven into conduction with a minimal gate voltage, simplifying the design of driving circuits.
  • Advanced High Cell Density Process: Utilizing an advanced high cell density process, the NTF3055L175T1G achieves outstanding performance with a compact footprint.

Applications

The NTF3055L175T1G is versatile and can be used in various applications, including:

  • Power supply regulation
  • DC/DC converters
  • Motor control circuits
  • Automotive applications
  • Switching circuits

Package and Reliability

This MOSFET comes in a surface-mount package, specifically a SOT-223, which is recognized for its compact size and excellent power dissipation characteristics. The NTF3055L175T1G is also characterized by its robust thermal performance, ensuring reliability across a wide temperature range.

Environmental Compliance

ON Semiconductor is committed to environmental sustainability. The NTF3055L175T1G complies with RoHS directives, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

In summary, the NTF3055L175T1G from ON Semiconductor is a powerful, efficient, and reliable solution for designers looking to incorporate a high-quality N-channel MOSFET into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2507 $50.1400
490+ $0.2058 $100.8420
755+ $0.1993 $150.4715
1,040+ $0.1929 $200.6160
1,345+ $0.1865 $250.8425
1,795+ $0.1672 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,920 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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