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NTF5P03T3G

Part No NTF5P03T3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.7A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 107369-NTF5P03T3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTF5P03T3G CAD Model

Description

ON Semiconductor NTF5P03T3G - P-Channel Power MOSFET

The NTF5P03T3G is a high-performance P-Channel Power MOSFET brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This device is designed to meet the rigorous demands of power regulation in modern electronic applications. With its advanced technology, the NTF5P03T3G is an ideal choice for power management solutions where efficiency and reliability are crucial.

Constructed with ON Semiconductor's proprietary technology, this MOSFET features a -30V drain-source voltage (V<sub>DS) and a continuous drain current (I<sub>D) of -4.8A, making it suitable for a wide range of applications such as load switch and power management tasks. Its low threshold voltage ensures that it can be easily driven by logic-level voltages, enhancing its compatibility with modern microcontrollers and digital circuits.

The NTF5P03T3G boasts an exceptional R<sub>DS(on) of just 70 mΩ at a V<sub>GS of -10V, which means it has a very low on-state resistance, minimizing power losses and improving efficiency when conducting. This feature, combined with the device's fast switching speed, leads to reduced switching losses and better overall performance in high-speed circuitry.

Encased in a compact and durable SOT-223 package, the NTF5P03T3G is designed for surface-mount technology (SMT), making it suitable for automated manufacturing processes. This package offers excellent thermal performance, ensuring that the MOSFET operates reliably even under high power conditions and within a wide temperature range.

ON Semiconductor has equipped the NTF5P03T3G with built-in protection features such as thermal shutdown and current limiting, which safeguard the device and the end application against potential damage due to overloading or overheating. This enhances the longevity and reliability of both the MOSFET and the application it is used in.

In summary, the NTF5P03T3G is a versatile and robust P-Channel Power MOSFET that delivers high efficiency, fast switching, and reliable performance in a compact form factor. It is an excellent choice for designers looking for a power management component that can deliver top-notch performance while maintaining energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6054 $51.4590
205+ $0.4967 $101.8235
315+ $0.4812 $151.5780
430+ $0.4657 $200.2510
560+ $0.4502 $252.1120
745+ $0.4036 $300.6820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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