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NTGS3443T2G

Part No NTGS3443T2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.2A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 565pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 4.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 1083884-NTGS3443T2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTGS3443T2G CAD Model

Description

ON Semiconductor NTGS3443T2G Product Overview

The NTGS3443T2G is a high-performance, small-signal N-Channel MOSFET from ON Semiconductor, designed to offer efficient power management and signal processing solutions across a variety of applications. This MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient devices that meet the rigorous demands of modern electronic systems.

Key Features

  • Low On-Resistance: The NTGS3443T2G boasts a very low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in circuit operation.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET facilitates high-frequency operation, making it suitable for power switching and signal processing tasks that require quick response times.
  • SOT-23 Package: Encased in a compact SOT-23 package, the NTGS3443T2G is ideal for space-constrained applications, allowing designers to minimize PCB real estate usage without sacrificing performance.
  • Low Gate Charge: The low gate charge of the NTGS3443T2G ensures minimal power dissipation during the switching process, contributing to the overall energy efficiency of the system.
  • RoHS Compliant: Compliance with RoHS standards means that the NTGS3443T2G is manufactured without the use of hazardous substances, making it an environmentally friendly choice for electronic designs.

Applications

The versatility of the NTGS3443T2G allows it to be integrated into a broad spectrum of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Systems
  • Portable Devices
  • Switching Regulators

Technical Specifications

With a continuous drain current (ID) of 3.5 A and a maximum drain-source voltage (VDSS) of 30 V, the NTGS3443T2G is capable of handling moderate power levels. Its threshold voltage (Vth) is specified between 0.45 V and 1.0 V, which ensures low-voltage operation for today's energy-sensitive circuits.

In conclusion, the NTGS3443T2G from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power management and signal processing systems with a MOSFET that offers low on-resistance, high-speed switching, and a compact footprint.

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