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IRF7494PBF

Part No IRF7494PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 5.1A 8SO / N-Channel 150 V 5.1A (Ta) 2.5W (Ta) Surface Mount 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1783 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001555466
Standard Package 95
Win Source Part Number 1065518-IRF7494PBF
Ultra Librarian 3D Model Ultra Librarian IRF7494PBF CAD Model

Description

The Infineon Technologies IRF7494PBF is an N-channel MOSFET transistor with a drain to source voltage of 150V.

  • Channel Type: N-channel
  • Drain to Source Voltage: 150V
  • Continuous Drain @ 25°C: 5.1A
  • Rds On: 44mOhm @ 3.1A, 10V
  • Gate Charge: 53 nC @ 10V
  • Input Capacitance: 1783 pF @ 25V
  • Alternative Parts: IRF7815PBF, FDS2572, FDS2582, SI7846DP-T1-E3, FDS86252, and STS5N15F4
  • ECCN: EAR99
  • REACH: Not affected by REACH regulations

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2285 $51.2555
55+ $1.8286 $100.5730
85+ $1.7714 $150.5690
117+ $1.7143 $200.5731
151+ $1.6571 $250.2221
202+ $1.4857 $300.1114
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,280 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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