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NTHD2102PT1G

Part No NTHD2102PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 3.4A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 58 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 16nC @ 2.5V
Max Input Capacitance 715pF @ 6.4V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 101454-NTHD2102PT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTHD2102PT1G CAD Model

Description

The NTHD2102PT1G is a high-performance, dual P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is engineered to deliver efficient power management and is ideal for a wide range of applications including load switch, power management, and other general-purpose switching applications.

Key Features:

  • Low RDS(on): Provides higher efficiency and reduces power losses with its low on-state resistance.
  • Dual P-Channel: Contains two P-Channel MOSFETs in a single package, enabling compact circuit design and simplified layout.
  • High Power Dissipation: Capable of dissipating a significant amount of power, ensuring reliability even under high load conditions.
  • Compact Package: Comes in a small, leadless package (Micro8™), which is ideal for space-constrained applications.
  • ESD Protection: Equipped with built-in ESD protection, enhancing the durability of the device against electrostatic discharges.
  • Voltage Rating: With a drain-to-source voltage (VDS) of 20V, it is suitable for a variety of low voltage applications.
  • Environmentally Friendly: Complies with RoHS and is Halogen-free, minimizing the environmental impact.

Applications:

The versatility of the NTHD2102PT1G makes it an excellent choice for numerous applications. It is particularly well-suited for:

  • Power management in portable and battery-powered devices such as smartphones, tablets, and laptops.
  • DC/DC converters where efficiency is crucial.
  • Load switching applications that require a compact solution with dual P-Channel MOSFETs.
  • Other general-purpose applications that require a high-performance P-Channel MOSFET.

Conclusion:

ON Semiconductor's NTHD2102PT1G is a robust and efficient solution for designers looking to enhance power management in their electronic designs. With its low RDS(on), compact packaging, and dual P-Channel configuration, it provides a combination of performance and space-saving that is hard to match. The device's ESD protection and compliance with environmental standards further ensure that it meets the demands of modern electronic applications while contributing to a greener future.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3862 $57.9300
365+ $0.3169 $115.6685
565+ $0.3072 $173.5680
780+ $0.2972 $231.8160
1,010+ $0.2873 $290.1730
1,350+ $0.2576 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,300 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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