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NTHD4401PT1G

Part No NTHD4401PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.1A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 155 mOhm @ 2.1A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 300pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 096286-NTHD4401PT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTHD4401PT1G CAD Model

Description

ON Semiconductor NTHD4401PT1G - Power MOSFET

The NTHD4401PT1G is a high-performance Power MOSFET from ON Semiconductor, designed to meet a wide range of applications requiring efficient power management. This device is a dual P-Channel MOSFET, which is a crucial component in modern electronic circuits, offering efficient power conversion and amplification.

Constructed with advanced PowerTrench® technology, the NTHD4401PT1G provides exceptional on-resistance and switching performance, which translates to reduced conduction and switching losses. This feature makes it an ideal choice for power-intensive applications while maintaining energy efficiency. The device is housed in a compact leadless 6-Pin TSOP package, which ensures a minimal footprint on the PCB and is suitable for space-constrained applications.

With a continuous drain current of -3.6A and a drain-source voltage of -20V, the NTHD4401PT1G is capable of handling moderate power levels. Its low threshold voltage ensures that it can be driven at lower gate voltages, making it compatible with contemporary low-voltage logic levels. This versatility allows the NTHD4401PT1G to be used in various circuit designs without the need for additional level-shifting components.

The device also features a low gate charge, which reduces the power required to switch the MOSFET on and off, further enhancing its efficiency. The NTHD4401PT1G is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability by avoiding the use of hazardous substances in its products.

Applications for the NTHD4401PT1G are diverse and include power management tasks in portable devices, such as smartphones and tablets, where battery life is critical. It is also suitable for use in load switch circuits, battery management systems, and DC-DC converters, among other power-related functions. The combination of high efficiency, low on-resistance, and a compact form factor makes the NTHD4401PT1G a reliable and effective solution for designers looking to optimize their power management strategies.

Overall, ON Semiconductor's NTHD4401PT1G is a testament to the company's expertise in power semiconductor design, offering a balance of performance, efficiency, and miniaturization for today's electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.5188 $66.0752
9+ $13.5539 $121.9851
14+ $13.1312 $183.8368
19+ $12.7073 $241.4387
24+ $12.2834 $294.8016
32+ $11.0129 $352.4128
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,800 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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