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NTHD4N02FT1G

Part No NTHD4N02FT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.9A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 4nC @ 4.5V
Max Input Capacitance 300pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 910mW (Tj)
Maximum Rds On at Id,Vgs 80 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 060644-NTHD4N02FT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHD4N02FT1G CAD Model

Description

The NTHD4N02FT1G from ON Semiconductor is a high-performance Power MOSFET designed for a range of applications requiring efficient power management and high reliability. This MOSFET utilizes ON Semiconductor's advanced technology to provide low on-resistance, minimal gate charge, and operation with low gate voltages, making it suitable for use in power conversion and switching applications.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance, which reduces power loss and improves efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, the NTHD4N02FT1G is ideal for high-frequency applications.
  • Low Gate Charge: The minimized gate charge allows for faster switching speeds and reduces the power required to drive the gate, thus saving energy.
  • High-Temperature Performance: Capable of operating at high temperatures, this MOSFET maintains its performance even under thermal stress.
  • Surface-Mount Package: The device comes in a compact surface-mount package, which is perfect for space-constrained applications.

Applications

The NTHD4N02FT1G is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Computing and Server Power Supplies
  • Automotive Systems
  • Consumer Electronics

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 24 V Continuous Drain Current (I<sub>D) 8 A Power Dissipation (P<sub>D) 1.56 W Operating Temperature Range -55°C to 150°C

For engineers and designers looking for a robust and efficient power MOSFET solution, the NTHD4N02FT1G from ON Semiconductor offers the performance and reliability required for demanding electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2510 $58.9850
565+ $0.2060 $116.3900
870+ $0.1996 $173.6520
1,200+ $0.1931 $231.7200
1,550+ $0.1866 $289.2300
2,075+ $0.1674 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,260 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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