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NTHD4P01FT1-D

Part No NTHD4P01FT1-D
Manufacturer ON Semiconductor
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer ON Semiconductor
Win Source Part Number 340114-NTHD4P01FT1-D
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHD4P01FT1-D CAD Model

Description

The ON Semiconductor NTHD4P01FT1-D is a high-performance P-Channel Power MOSFET designed to deliver efficient power management and conversion. This device is ideal for a wide range of applications, including power supply, motor control, and battery management systems. With its compact footprint and low on-resistance, the NTHD4P01FT1-D is a perfect choice for space-constrained and power-sensitive designs.

Key Features

  • Low On-Resistance: The MOSFET features a low on-resistance of typically 20 mΩ at VGS = -4.5 V, which enhances its efficiency by minimizing power losses during operation.
  • High Power Dissipation: With a power dissipation of 2.5 W, this device can handle significant power, making it suitable for demanding applications.
  • Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTHD4P01FT1-D provides superior performance and reliability.
  • Low Threshold Voltage: The device has a low threshold voltage, which allows for operation at lower gate voltages and improves the overall power efficiency.
  • Compact Size: The MOSFET comes in a small SOT-416 (SC-75) surface-mount package, which saves valuable board space without compromising on power handling capability.

Applications

The NTHD4P01FT1-D is versatile and can be used in various applications, such as:

  • Load Switches
  • DC/DC Converters
  • Battery Management Systems
  • Power Management in Portable Devices
  • Motor Control Circuits

Specifications

Parameter Value Drain-to-Source Voltage (VDSS) -20 V Gate-to-Source Voltage (VGSS) ±8 V Continuous Drain Current (ID) -3.7 A Power Dissipation (PD) 2.5 W Operating Temperature Range (TJ) -55°C to 150°C

With its robust design and impressive electrical characteristics, the ON Semiconductor NTHD4P01FT1-D P-Channel Power MOSFET is an excellent choice for designers looking to improve power efficiency and performance in their electronic systems.

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