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NTJS4160NT1G

Part No NTJS4160NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.8A SC88-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 2.75nC @ 4.5V
Max Input Capacitance 230pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 101428-NTJS4160NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTJS4160NT1G CAD Model

Description

ON Semiconductor NTJS4160NT1G Product Overview

The NTJS4160NT1G is a high-performance Power MOSFET from ON Semiconductor, renowned for its efficiency and reliability in a variety of applications. This advanced power management component is designed to cater to the needs of modern electronic circuits, providing a compact and energy-efficient solution for switching applications.

Key Features

  • Low On-Resistance: The NTJS4160NT1G boasts an exceptionally low on-resistance, which minimizes power loss and improves overall efficiency.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal delay in the power regulation process.
  • Low Gate Charge: The device requires a low gate charge, which reduces the power needed to control the MOSFET, thereby enhancing the power efficiency of the overall system.
  • ESD Protected: It comes with built-in Electrostatic Discharge (ESD) protection, safeguarding the device from unexpected voltage spikes and enhancing its durability.

Applications

The NTJS4160NT1G is versatile and can be used in a wide range of applications, including:

  • Power management systems
  • DC/DC converters
  • Battery powered devices
  • Motor control circuits
  • Load switching
  • Portable electronics

Product Specifications

The NTJS4160NT1G is a single P-Channel MOSFET with a drain-to-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -8A. It operates within an extended temperature range, making it suitable for various industrial applications. The device comes in a compact SOT-23 package, which is ideal for space-constrained applications.

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly products. The NTJS4160NT1G is compliant with RoHS (Restriction of Hazardous Substances) and is free from lead, making it a suitable choice for eco-conscious manufacturers looking to reduce their environmental impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
415+ $0.1392 $57.7680
1,015+ $0.1143 $116.0145
1,570+ $0.1106 $173.6420
2,160+ $0.1071 $231.3360
2,790+ $0.1036 $289.0440
3,735+ $0.0929 $346.9815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 415 pcs
Order Increment : 1 pcs
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