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NTLTS3107PR2G

Part No NTLTS3107PR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHAN 8.3A 20V MICRO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Base Product Number NTLTS31
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649841-NTLTS3107PR2G
Ultra Librarian 3D Model Ultra Librarian NTLTS3107PR2G CAD Model

Description

ON Semiconductor NTLTS3107PR2G - Power MOSFET

The NTLTS3107PR2G is a high-performance Power MOSFET presented by ON Semiconductor, a leading supplier in the semiconductor industry. This device is designed to meet the rigorous demands of power regulation applications, providing an optimal solution for power management challenges.

With an advanced technology design, the NTLTS3107PR2G boasts a low on-resistance (R<sub>DS(on)) that significantly reduces conduction losses, thus enhancing system efficiency. This feature is particularly beneficial in applications where high current handling and efficiency are critical.

The device operates as a P-channel MOSFET, which allows for simplified drive circuitry in high-side switch configurations due to its positive gate voltage operation. The NTLTS3107PR2G is capable of handling a continuous drain current (I<sub>D) of up to 3.8 A, making it suitable for a wide range of applications, including but not limited to, load switching, power management, and motor control.

The MOSFET comes in a compact, surface-mount package (2x2 mm WDFN), which is highly valued in space-constrained applications. This small footprint does not compromise its performance or reliability, making it an excellent choice for portable electronics, consumer devices, and other applications where space is at a premium.

Additionally, the NTLTS3107PR2G is characterized by its low threshold voltage (V<sub>GS(th)), which ensures low gate drive requirements and facilitates the use of lower voltage logic signals. This characteristic is particularly important in battery-operated devices where power conservation is paramount.

ON Semiconductor has equipped the NTLTS3107PR2G with robust protection features, including overcurrent, over-temperature, and electrostatic discharge (ESD) protection, ensuring the longevity and reliability of both the MOSFET and the device it is used in.

In summary, the NTLTS3107PR2G from ON Semiconductor is a high-efficiency, reliable, and versatile power MOSFET that is well-suited for a wide array of power regulation tasks in modern electronic devices. Its combination of low on-resistance, high current capability, and compact packaging makes it an excellent choice for designers looking to optimize their power management solutions.

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