The NTMD2C02R2G from ON Semiconductor is a state-of-the-art dual N-Channel Power MOSFET designed to deliver high performance with low on-resistance and a compact form factor. This advanced power management component is ideal for a wide range of applications, including power conversion, motor drives, and load switching.

Key Features

• Low On-Resistance: The device features ultra-low on-resistance, which results in reduced conduction losses and enhances overall efficiency.
• High Current Capability: With its ability to handle high currents, the NTMD2C02R2G is well-suited for demanding applications that require robust power handling capabilities.
• Dual N-Channel Configuration: The dual N-Channel setup allows for flexibility in design, enabling the use of half-bridge or full-bridge topologies within a single package.
• PowerPAK® SO-8 Package: Enclosed in a PowerPAK® SO-8 package, it offers a compact footprint without compromising on power and thermal performance.
• Fast Switching Speed: The device is optimized for fast switching, contributing to improved performance in high-frequency applications.
• Thermal Management: Enhanced thermal characteristics ensure reliability and longevity even under high temperature operating conditions.

Applications

The NTMD2C02R2G is versatile and can be used in various applications, including:

• DC/DC Converters
• Power Supply Modules
• Battery Management Systems
• Brushed and Brushless Motor Controls
• Load Switching Circuits

Electrical Specifications

Parameter Conditions Min Typ Max Drain-to-Source Voltage (V<sub>DS) - - 20V - Gate Threshold Voltage (V<sub>GS(th)) V<sub>DS = V<sub>GS, I<sub>D = 250 µA 0.45V - 1.05V Continuous Drain Current (I<sub>D) T<sub>A = 25°C - 7.7A - Power Dissipation (P<sub>D) T<sub>A = 25°C - 2.5W -

Overall, the NTMD2C02R2G by ON Semiconductor is a high-quality dual N-Channel MOSFET that offers efficiency, reliability, and high performance for a variety of power management applications.