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NTMFD4902NFT3G

Part No NTMFD4902NFT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8DFN  /  Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual), Schottky
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.3A, 13.3A
Rds On (Max) @ Id, Vgs 6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Power - Max 1.1W, 1.16W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Base Product Number NTMFD4902
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Win Source Part Number 1082891-NTMFD4902NFT3G
Ultra Librarian 3D Model Ultra Librarian NTMFD4902NFT3G CAD Model

Description

ON Semiconductor NTMFD4902NFT3G Dual N-Channel Power MOSFET

The NTMFD4902NFT3G is a high-performance dual N-Channel Power MOSFET manufactured by ON Semiconductor, designed to deliver efficient power management and conversion in a compact package. This product is part of ON Semiconductor's extensive portfolio of MOSFETs, which are renowned for their reliability and innovative technology.

Featuring a 30V drain-to-source voltage (Vds) and a continuous drain current (Id) of 6.3A at 25°C, this MOSFET is engineered to handle significant power in a range of electronic applications. Its low on-resistance (Rds(on)) of just 20 mOhm at a gate drive of 10V ensures minimal power loss and improved efficiency, making it an ideal choice for power-intensive circuits.

The NTMFD4902NFT3G is housed in a compact, surface-mount PowerTrench® package, which is designed to minimize inductance and power dissipation, further enhancing its performance. The package is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

This dual N-Channel MOSFET is optimized for synchronous rectification in DC/DC converters, which is critical for applications requiring efficient power conversion. It is also well-suited for load switch and battery protection circuits, thanks to its fast switching speed and robust thermal performance. Additionally, the NTMFD4902NFT3G can be used in motor control circuits, where precise and efficient power management is essential.

ON Semiconductor's NTMFD4902NFT3G is not only a testament to the company's dedication to quality but also to innovation. With features such as ESD protection and a maximum junction temperature of 150°C, this MOSFET is built to offer reliable performance even under challenging conditions.

In summary, the NTMFD4902NFT3G from ON Semiconductor is a versatile and efficient solution for a wide range of power management applications. Its low on-resistance, high current capability, and compact footprint make it an excellent choice for designers looking to optimize their power circuits without compromising on space or performance.

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