ON Semiconductor NTMFD5C466NT1G - Power MOSFET

The NTMFD5C466NT1G is a high-performance Power MOSFET produced by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is part of ON Semiconductor's comprehensive portfolio of energy-efficient devices, designed to meet the demands of modern electronic applications requiring high power density and efficiency.

Key Features:

• Low R<sub>DS(on): The device boasts a low on-resistance, which ensures minimal power loss during operation and enhances overall efficiency.
• High Current Capacity: With its ability to handle a substantial continuous drain current, this MOSFET is suitable for high-power applications.
• Power-SO8 Package: The compact Power-SO8 package allows for a smaller footprint on the PCB and is ideal for space-constrained applications.
• Low Gate Charge: The device features a low gate charge, which translates to reduced switching losses and faster switching performance.
• 100% Avalanche Tested: Ensuring reliability and robustness, each unit is tested for avalanche energy capability.
• Halogen-Free: As part of ON Semiconductor's commitment to environmental sustainability, the NTMFD5C466NT1G is designed to be halogen-free.

Applications:

The NTMFD5C466NT1G is versatile and can be used in a variety of applications, including:

• DC/DC converters
• Power management systems
• Motor drives
• Computing
• Telecommunications
• Automotive systems

Technical Specifications:

Parameter Value V<sub>DS (Drain-Source Voltage) 30 V I<sub>D (Continuous Drain Current) 48 A R<sub>DS(on) (Typical) 2.6 mΩ Package Power-SO8

In summary, the NTMFD5C466NT1G from ON Semiconductor is a robust and efficient solution for power management challenges in a variety of electronic systems. Its low on-resistance, high current capacity, and compact form factor make it an excellent choice for designers looking to optimize performance while maintaining energy efficiency.