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NTMFS4119NT3G

Part No NTMFS4119NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 60nC @ 4.5V
Max Input Capacitance 4800pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 137139-NTMFS4119NT3G
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian NTMFS4119NT3G CAD Model

Description

The NTMFS4119NT3G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed using advanced PowerTrench® technology that ensures optimal performance in a wide range of applications. It is particularly suitable for power management tasks where efficiency and reliability are of paramount importance.

With a compact footprint, the NTMFS4119NT3G offers a drain-to-source voltage (VDS) of 30V, a continuous drain current (ID) of 46A, and a power dissipation (PD) of 3.8W. This makes it an excellent choice for space-constrained designs that require high current handling capabilities. The device also features a low on-resistance (RDS(on)) of just 7.3mΩ at VGS = 10V, which translates to reduced conduction losses and improved overall efficiency.

The NTMFS4119NT3G is designed with an integrated ESD protection diode, which provides enhanced robustness and reliability. It is capable of withstanding high energy pulses in the avalanche and commutation modes, ensuring the longevity of the component in harsh environments. The product also features ultra-low gate charge (QG) and capacitance (Ciss), which improve the switching performance and reduce switching losses, making it ideal for high-frequency applications.

ON Semiconductor's NTMFS4119NT3G is available in a surface-mount package, specifically a 5x6 mm flat lead package, which is RoHS compliant and Halogen-free. This package is designed for optimal thermal performance and is compatible with standard surface mount processes, facilitating easy integration into various circuit designs.

Whether you're designing power supplies, DC-DC converters, motor drives, or any other power-intensive application, the NTMFS4119NT3G from ON Semiconductor is a reliable and efficient solution that can help you achieve a competitive edge in your product designs.

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