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NTMFS4120NT3G

Part No NTMFS4120NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 3600pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 060663-NTMFS4120NT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4120NT3G CAD Model

Description

Product Overview: NTMFS4120NT3G

The NTMFS4120NT3G is a high-performance, N-channel Power MOSFET produced by ON Semiconductor, a renowned leader in energy-efficient innovations. This component is designed to cater to a variety of applications that require efficient power management, including but not limited to, computing, automotive, consumer, and industrial markets. The NTMFS4120NT3G is a testament to ON Semiconductor's commitment to providing state-of-the-art solutions for power conversion and management challenges.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which minimizes conductive losses and improves overall efficiency in circuits.
  • High Current Capacity: Capable of handling high currents, this MOSFET is suitable for demanding power applications.
  • Low Gate Charge: A low gate charge enables faster switching speeds, which is crucial for high-frequency operations.
  • Single Pulse Avalanche Energy Rated: The MOSFET is designed to withstand energy in avalanche mode, enhancing its reliability and robustness.
  • RoHS Compliant: The NTMFS4120NT3G meets the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.

Applications

The NTMFS4120NT3G is versatile and can be integrated into a wide range of electronic systems. Its superior switching performance and energy efficiency make it ideal for power supply applications, DC-DC converters, motor drives, and other power-intensive applications. The component's robustness is also suitable for automotive applications where reliability is paramount.

Technical Specifications

This MOSFET operates with a continuous drain current of up to 30A, and it can tolerate a maximum drain-source voltage (Vds) of 20V. The threshold voltage (Vgs th) is in the range of 0.8V to 1.5V, which allows for low-voltage operation. The total gate charge (Qg) is specified at a typical value of 8.7 nC, contributing to its efficient switching behavior. The device is housed in a compact, surface-mountable package, ensuring easy integration into modern PCB designs.

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