The NTMFS4841NT1G is a high-performance Power MOSFET from ON Semiconductor, designed to cater to a broad range of applications requiring efficient power management and delivery. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, which are known for their reliability and superior performance in various electronic circuits.

Key Features

• Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain-to-Source Voltage (V_DS): 30 V
• Continuous Drain Current (I_D): 9.7 A
• Power Dissipation (P_D): 3.8 W
• R_DS(on): 13.5 mOhm at V_GS = 10 V
• Operating Temperature Range: -55°C to +150°C
• Package: SO-8 FL

Applications

The NTMFS4841NT1G is suitable for a variety of applications, including but not limited to:

• Power Management
• DC/DC Converters
• Load Switching
• Battery Management Systems
• Motor Drives

Product Advantages

The NTMFS4841NT1G offers numerous advantages for designers and engineers. Its low on-resistance ensures minimal power loss and higher efficiency in power conversion applications. The device's robust thermal performance makes it suitable for high-temperature operations, enhancing its reliability across various environments. Additionally, the compact SO-8 FL package allows for a smaller footprint on the PCB, making it ideal for space-constrained applications.

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly products that meet the highest standards of quality. The NTMFS4841NT1G is compliant with RoHS (Restriction of Hazardous Substances) and is designed to meet or exceed industry standards for performance and reliability.