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NTMS10P02R2

Part No NTMS10P02R2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.8A 8SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 16 V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number NTMS10
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649907-NTMS10P02R2
Ultra Librarian 3D Model Ultra Librarian NTMS10P02R2 CAD Model

Description

ON Semiconductor NTMS10P02R2 Power MOSFET

The ON Semiconductor NTMS10P02R2 is a high-performance, P-Channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This robust semiconductor device is engineered to handle significant power levels while maintaining low on-resistance and high switching speeds, making it an ideal choice for design engineers looking to optimize their power circuits.

Key Features

  • Low R<sub>DS(on): The NTMS10P02R2 boasts a low drain-to-source on-resistance, which means it has minimal power loss during operation, contributing to the overall efficiency of the system it is integrated into.
  • High Current Capacity: With the ability to handle a continuous drain current of up to 8.8 A, this MOSFET can manage high-current applications with ease.
  • High Voltage Tolerance: The device is rated for a drain-to-source voltage of -20 V, providing a good safety margin for various applications.
  • Fast Switching Speed: Designed with fast switching in mind, the NTMS10P02R2 reduces transition losses, which is crucial for high-frequency power conversion applications.
  • Thermal Management: The MOSFET comes in a compact surface-mount package that aids in effective thermal dissipation, ensuring reliable performance under varying operating conditions.

Applications

The NTMS10P02R2 is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Load switch applications
  • Power management for portable devices

With its combination of low on-resistance, high current handling, and fast switching capabilities, the NTMS10P02R2 from ON Semiconductor is a reliable and efficient choice for designers who require a high-performance P-Channel MOSFET. The device's compact footprint also makes it suitable for space-constrained applications, providing flexibility in PCB design and layout.

Overall, the NTMS10P02R2 is a testament to ON Semiconductor's commitment to providing advanced power management solutions that meet the evolving needs of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8778 $61.4460
165+ $0.7207 $118.9155
250+ $0.6976 $174.4000
345+ $0.6757 $233.1165
445+ $0.6526 $290.4070
595+ $0.5856 $348.4320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,470 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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