The NTMS4800NR2G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This MOSFET is a critical component for modern electronic applications, offering a blend of low on-resistance and high switching performance which is ideal for a wide range of power management tasks.
Key Features
- Low R<sub>DS(on): Provides reduced conduction losses and enhances power efficiency.
- High Continuous Drain Current (I<sub>D): Suitable for high-power applications with a robust continuous drain current capability.
- High Switching Speed: Enables fast switching applications, reducing transition losses.
- PowerTrench® Technology: Utilizes ON Semiconductor's advanced PowerTrench® process that optimizes the device for low gate charge and capacitance, improving performance in switching applications.
Applications
The NTMS4800NR2G is versatile and can be used in various applications, including:
- Power supply converters
- Motor drives
- Battery management systems
- DC-DC converters
- Load switches
Product Specifications
Parameter
Value
V<sub>DSS
30V
R<sub>DS(on)
7.5 mΩ
I<sub>D
80 A
Package
SO-8 FL
Temperature Range
-55°C to +150°C
Quality and Environmental
The NTMS4800NR2G is RoHS compliant and adheres to the stringent quality standards set by ON Semiconductor, ensuring reliability and performance in the most demanding environments.
With its robust design and cutting-edge technology, the NTMS4800NR2G from ON Semiconductor is an excellent choice for designers seeking a high-efficiency power MOSFET that does not compromise on performance.