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NTMS4N01R2

Part No NTMS4N01R2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1200pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 770mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060690-NTMS4N01R2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4N01R2 CAD Model

Description

Product Overview: NTMS4N01R2 from ON Semiconductor

The NTMS4N01R2 is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to meet the rigorous demands of power regulation applications across a wide range of industries. With its advanced technology, the NTMS4N01R2 offers exceptional power density, efficiency, and reliability, making it an ideal choice for designers looking to enhance system performance while reducing energy consumption.

Key Features

  • Low On-Resistance: The NTMS4N01R2 boasts an extremely low on-resistance, which translates to minimal power loss during operation and enhances overall efficiency.
  • High Switching Speed: Engineered for fast switching, this MOSFET ensures that power conversion applications operate with high efficiency and reduced switching losses.
  • Thermal Management: With an excellent thermal performance, the NTMS4N01R2 can handle higher currents and operate at elevated temperatures, ensuring reliability in demanding conditions.
  • Voltage Rating: It comes with a drain-to-source voltage (Vds) rating that supports a wide range of applications, providing flexibility in circuit design.
  • Gate Charge: The optimized gate charge of this MOSFET allows for reduced drive power requirements, contributing to the overall energy-saving characteristics of the device.

Applications

The NTMS4N01R2 is versatile and can be used in various applications where efficient power conversion is critical. These include:

  • DC/DC Converters
  • Power Supply Units
  • Motor Drives
  • Automotive Systems
  • LED Lighting
  • Computing and Telecommunications

Quality and Reliability

ON Semiconductor is committed to delivering products that adhere to the highest standards of quality and reliability. The NTMS4N01R2 is no exception, as it is manufactured in state-of-the-art facilities, ensuring that each component meets stringent requirements. Customers can trust in the durability and performance of this Power MOSFET for their critical power management solutions.

In summary, the NTMS4N01R2 from ON Semiconductor is a powerful, efficient, and reliable component that is well-suited for a variety of power regulation tasks. Its advanced features and versatility make it a valuable addition to any power management system.

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