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NTMSD6N303R2

Part No NTMSD6N303R2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKY
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Series FETKY
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 950pF @ 24V
Vgs (Maximum) ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Maximum) 2W (Ta)
Rds On (Maximum) @ Id, Vgs 32 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SOIC
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1232602-NTMSD6N303R2
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name NTMSD6N303
Introduction Date November 14, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTMSD6N303R2 CAD Model

Description

Product Overview: NTMSD6N303R2

The NTMSD6N303R2 is a high-performance Power MOSFET brought to market by ON Semiconductor, a renowned leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous requirements of modern electronic circuits, offering a combination of low on-resistance and high switching speed. It's an ideal choice for a range of applications, including power management, conversion, and regulation tasks in consumer, automotive, and industrial electronics.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low drain-to-source on-resistance, which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Speed: With its fast switching capabilities, the NTMSD6N303R2 minimizes switching losses and is well-suited for high-frequency applications.
  • Power Dissipation: It features a power dissipation of 2.5W, allowing for a good balance between power handling and size.
  • High Continuous Drain Current: The MOSFET supports a continuous drain current of 6A, making it capable of handling significant current loads.
  • Advanced High Cell Density Process: Manufactured using an advanced high cell density process, it ensures reliable performance and longevity.

Applications

The NTMSD6N303R2 is versatile and can be used in various applications such as:

  • DC/DC converters
  • Power supply modules
  • Motor control circuits
  • Load switches
  • Automotive applications
  • LED lighting solutions

Quality and Reliability

ON Semiconductor is committed to delivering quality and reliability. The NTMSD6N303R2 is subjected to rigorous testing and quality control measures to ensure it meets the high standards expected by industry professionals. It is also supported by ON Semiconductor's technical documentation and application support, making integration into your designs seamless and straightforward.

Environmental Compliance

Aligned with global environmental standards, the NTMSD6N303R2 is RoHS compliant, ensuring that it adheres to regulations that limit the use of hazardous substances in electronic components. This commitment to environmental sustainability makes it a responsible choice for eco-conscious businesses and consumers.

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