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NTP110N65S3HF

Part No NTP110N65S3HF
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 30A TO220-3  /  N-Channel 650 V 30A (Tc) 240W (Tc) Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® III
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2635 pF @ 400 V
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number NTP110
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NTP110N65S3HF-ND,NTP110N65S3HFOS
Standard Package 50
Win Source Part Number 1119067-NTP110N65S3HF
Ultra Librarian 3D Model Ultra Librarian NTP110N65S3HF CAD Model

Description

ON Semiconductor NTP110N65S3HF MOSFET

The NTP110N65S3HF from ON Semiconductor is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This device is part of ON Semiconductor's high-performance N-channel MOSFET series and is engineered to deliver exceptional performance in terms of switching speed, low on-resistance (R<sub>DS(on)), and robust thermal characteristics. It is an ideal choice for a variety of demanding applications, including power supplies, inverters, and motor control systems.

The NTP110N65S3HF boasts a 650V drain-to-source breakdown voltage (V<sub>DSS), which provides a comfortable margin for high-voltage operations, ensuring reliability and longevity in applications where voltage spikes may occur. Its maximum continuous drain current (I<sub>D) of 110A allows for substantial current flow, making it suitable for high-power applications. Furthermore, the low R<sub>DS(on) of 65 mΩ minimizes conduction losses, thereby improving overall efficiency and reducing heat generation.

ON Semiconductor has equipped the NTP110N65S3HF with a robust body diode, which is capable of handling high-speed switching and reverse recovery. This feature is particularly important in applications such as synchronous rectification, where the body diode's performance can significantly affect the efficiency of the system. The device's fast switching speeds reduce transition losses and contribute to its excellent performance in high-frequency circuits.

Designed with advanced silicon technology, the NTP110N65S3HF is housed in a TO-220 package, which is known for its ease of mounting and good thermal performance. The package includes a rugged, source-connected tab, which helps in reducing inductance and enhances the device's high-speed switching capabilities.

ON Semiconductor has also focused on environmental sustainability with the NTP110N65S3HF, ensuring it is compliant with RoHS directives. This MOSFET is free from lead, halogen, and antimony, making it a more environmentally friendly choice for manufacturers looking to create green products.

In conclusion, the NTP110N65S3HF from ON Semiconductor is a powerful, efficient, and reliable MOSFET that meets the needs of modern high-voltage, high-power electronic systems. Its advanced features and robust design make it a top choice for designers seeking to optimize their power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.7066 $51.3594
22+ $4.6823 $103.0106
34+ $4.5360 $154.2240
46+ $4.3897 $201.9262
59+ $4.2434 $250.3606
79+ $3.8044 $300.5476
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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