The NTPF190N65S3HF from ON Semiconductor is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This device is part of ON Semiconductor's high-performance portfolio, featuring a 650V N-channel MOSFET that is optimized for fast switching performance and low on-resistance, making it an ideal choice for a wide range of power supply and conversion systems.

Key Features

• High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, providing a robust solution for power systems.
• Low On-Resistance: The NTPF190N65S3HF boasts an extremely low on-resistance (R<sub>DS(on)) of 190 mΩ, which translates to reduced conduction losses and improved overall efficiency.
• High Continuous Current: This power MOSFET supports a continuous drain current (I<sub>D) of up to 63A, making it suitable for high-power applications.
• Fast Switching Performance: The fast switching capability ensures minimal switching losses and is ideal for high-frequency power converters and inverters.
• Robust Body Diode: It features a robust body diode with a low reverse recovery charge (Q<sub>rr), which is critical for high-efficiency power conversion and reduces stress on the device during hard switching conditions.

Applications

The NTPF190N65S3HF is suitable for a variety of applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• High-efficiency DC-DC converters
• Electric vehicle (EV) charging systems
• Solar inverters and energy storage systems

Environmental and Quality Standards

ON Semiconductor is committed to environmental stewardship and the NTPF190N65S3HF is designed to meet high environmental and quality standards. It is RoHS compliant, ensuring that it is free from hazardous substances, and is manufactured to provide reliable performance under varying conditions.