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NTR2101PT1

Part No NTR2101PT1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 3.7A SOT23-3 / P-Channel 8 V 3.7A (Ta) 960mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1173 pF @ 4 V
Power Dissipation (Max) 960mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number NTR210
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649933-NTR2101PT1
Ultra Librarian 3D Model Ultra Librarian NTR2101PT1 CAD Model

Description

Introducing ON Semiconductor's NTR2101PT1 Power MOSFET

The NTR2101PT1 is a next-generation Power MOSFET brought to you by ON Semiconductor, a trusted leader in energy-efficient innovations. This high-performance, P-Channel MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a compact, efficient, and reliable solution for power management challenges.

Key Features:

  • Low On-Resistance: The NTR2101PT1 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in your circuit designs.
  • High Power Density: With its small footprint, this MOSFET enables high power density, making it ideal for space-constrained applications without sacrificing performance.
  • Advanced Technology: Utilizing ON Semiconductor's cutting-edge Trench technology, the NTR2101PT1 offers superior switching performance, which is essential for high-speed applications.
  • Thermal Management: The device features excellent thermal characteristics, ensuring reliable operation even under high-temperature conditions.

Applications:

The NTR2101PT1 is versatile and can be used in a wide array of applications, including but not limited to:

  • Power management for portable devices such as smartphones and tablets
  • DC/DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits in consumer electronics

Product Specifications:

This P-Channel MOSFET operates at a 20V drain-source voltage (V<sub>DS) with a continuous drain current (I<sub>D) of -6.9A, making it a robust choice for high-performance applications. The NTR2101PT1 also features a fast switching speed, low gate charge (Q<sub>g), and a low threshold voltage (V<sub>GS(th)), which enhances its responsiveness and efficiency.

Quality and Reliability:

ON Semiconductor is committed to delivering the highest quality products. The NTR2101PT1 is no exception, and it has undergone rigorous testing to ensure it meets the stringent standards for reliability and performance that customers expect from ON Semiconductor.

Whether you are designing power supplies, battery-powered devices, or any other application requiring efficient power management, the NTR2101PT1 from ON Semiconductor is a superior choice that will help you achieve a competitive edge in your product designs.

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