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NTTFS3A08PZTWG

Part No NTTFS3A08PZTWG
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET P-CH 20V 14A U8FL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 9A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 6.7mOhm at 12A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 5000pF at 10V
Power Dissipation (Maximum) 840mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-WDFN (3.3x3.3)
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 5,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805844-NTTFS3A08PZTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS3A08PZTWG CAD Model

Description

ON Semiconductor NTTFS3A08PZTWG Overview

The NTTFS3A08PZTWG is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management within a compact package. Ideal for a variety of applications, including computing, automotive, power supply, and consumer electronics, the NTTFS3A08PZTWG is a versatile component that enhances performance while maintaining energy efficiency.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low on-resistance, resulting in reduced conduction losses and improved power efficiency.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current, facilitating the flow of a significant amount of current for the device's size, making it suitable for high-power applications.
  • Power-SO8FL Package: Encased in a compact Power-SO8FL package, the NTTFS3A08PZTWG is optimized for minimal space usage without compromising its performance, ideal for space-constrained applications.
  • Low Gate Charge (Q<sub>G): The low gate charge ensures fast switching performance, which is critical for applications requiring high-frequency operation.
  • High Performance at High Temperatures: Engineered to perform reliably in high-temperature environments, this MOSFET can handle the thermal demands of a wide range of applications.

Applications

  • DC/DC Converters
  • Motor Drives
  • Power Management Solutions
  • Battery Powered Systems
  • Load Switches
  • Point of Load (POL) Modules

The NTTFS3A08PZTWG from ON Semiconductor is a testament to the company's commitment to providing advanced technology that pushes the boundaries of power management. With its robust design and superior electrical characteristics, this Power MOSFET is an excellent choice for designers looking to enhance the efficiency and reliability of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7541 $60.3280
190+ $0.6188 $117.5720
290+ $0.5994 $173.8260
400+ $0.5802 $232.0800
515+ $0.5608 $288.8120
690+ $0.5028 $346.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,081 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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