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NTTFS5826NLTWG

Part No NTTFS5826NLTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8A 8WDFN / N-Channel 60 V 8A (Ta) 3.1W (Ta), 19W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number NTTFS5
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 887837-NTTFS5826NLTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS5826NLTWG CAD Model

Description

ON Semiconductor NTTFS5826NLTWG: A Power MOSFET for High-Efficiency Applications

The NTTFS5826NLTWG is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management solutions. This component is specifically designed to address the ever-increasing demands for higher energy efficiency in modern electronic applications.

Featuring a Trench 8 SuperFET II technology, this MOSFET is optimized for high performance in a wide range of applications. The technology imbues the NTTFS5826NLTWG with low on-state resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), which contributes to its superior switching performance and better energy efficiency. The device is housed in a compact 5x6mm flat lead package that is not only space-saving but also enhances thermal performance, making it an ideal solution for power-dense designs.

With a maximum continuous drain current (I<sub>D) of 48A and a maximum drain-source voltage (V<sub>DSS) of 40V, the NTTFS5826NLTWG is well-suited for a wide array of power applications. These include synchronous rectification in DC/DC and AC/DC converters, Point of Load (PoL) modules, and high-density power supplies, among others.

Safety and reliability are key considerations for ON Semiconductor. The NTTFS5826NLTWG is designed with these in mind, featuring 100% avalanche tested guarantees and self-protected characteristics. This ensures that your applications not only perform well but are also protected against adverse conditions.

The NTTFS5826NLTWG is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability. By choosing this Power MOSFET, designers and engineers can expect not only top-notch performance but also adherence to environmental standards.

In summary, the NTTFS5826NLTWG from ON Semiconductor represents a blend of efficiency, power, and reliability, making it an excellent choice for your high-performance power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.0855 $60.5130
14+ $8.2756 $115.8584
22+ $8.0169 $176.3718
30+ $7.7581 $232.7430
39+ $7.4994 $292.4766
52+ $6.7233 $349.6116
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,710 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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