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NTTS2P03R2

Part No NTTS2P03R2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.1A 8MICRO
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 500pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 2.48A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 104522-NTTS2P03R2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTTS2P03R2 CAD Model

Description

The NTTS2P03R2 from ON Semiconductor is a cutting-edge Power MOSFET that offers high efficiency and reliability for a wide range of applications. This P-Channel MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and high switching performance.

Key Features

  • Low On-Resistance: The NTTS2P03R2 features an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, contributing to reduced switching losses.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage, making it suitable for low-voltage drive applications and enhancing its versatility.
  • ESD Protection: Built-in Electrostatic Discharge (ESD) protection shields the device from unexpected voltage spikes, ensuring long-term reliability and stability.
  • Compact Package: The NTTS2P03R2 comes in a compact, surface-mount package, which is perfect for space-constrained applications.
  • RoHS Compliant: This product is compliant with RoHS standards, minimizing the environmental impact by avoiding the use of hazardous substances.

Applications

The versatility of the NTTS2P03R2 makes it suitable for a broad range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Management Systems
  • Load Switches
  • Portable Electronic Devices

Technical Specifications

Some of the technical specifications of the NTTS2P03R2 include:

  • Voltage - Rated: -30V
  • Current - Continuous Drain (Id) @ 25°C: -3.6A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ -2.5A, -10V
  • Power Dissipation (Max): 1.4W

With its robust performance and compact size, the NTTS2P03R2 Power MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance efficiency and reliability in their electronic designs.

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