ON Semiconductor NVB082N65S3F N-Channel MOSFET

The NVB082N65S3F is a high-performance N-Channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power management and semiconductor solutions. Designed to cater to the demands of high-efficiency power conversion systems, this MOSFET is an ideal choice for a variety of applications including power supplies, converters, and motor drives.

Key Features:

• Low On-Resistance: The NVB082N65S3F features a very low on-resistance (R<sub>DS(on)) of 8 mΩ at 10 V, minimizing conduction losses and improving overall efficiency.
• High Voltage Capability: With a maximum drain-to-source voltage (V<sub>DSS) of 650 V, this MOSFET can handle high voltage applications with ease, making it suitable for high voltage power systems.
• High Continuous Drain Current: It offers a high continuous drain current (I<sub>D) of 82 A, allowing it to drive high current loads without performance degradation.
• Fast Switching: The NVB082N65S3F is designed for fast switching applications, which is critical for reducing switching losses and improving the power conversion efficiency.
• Robust Thermal Performance: Enhanced by an optimized package design, the MOSFET ensures excellent thermal performance and reliability under various operating conditions.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Inverters
• DC-DC Converters
• Motor Control Applications

The NVB082N65S3F is housed in a TO-247 package, known for its high power dissipation capability. This, combined with the MOSFET's superior electrical characteristics, makes it a robust and efficient solution for power electronics engineers looking to optimize their designs for performance and reliability.

ON Semiconductor's commitment to innovation and quality ensures that the NVB082N65S3F MOSFET meets the highest standards, providing a reliable and cost-effective solution for managing power in a wide range of electronic devices.