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NVB5426NT4G

Part No NVB5426NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 215W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1084081-NVB5426NT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NVB5426NT4G CAD Model

Description

ON Semiconductor NVB5426NT4G Power MOSFET

The ON Semiconductor NVB5426NT4G is a high-performance Power MOSFET designed for a wide range of applications that demand high efficiency and reliability. This component is part of ON Semiconductor's extensive portfolio of semiconductor solutions, which are known for their quality and performance in the electronics industry.

Key Features

  • Device Type: Power MOSFET
  • Configuration: Single N-Channel
  • Package: TO-263 (D2PAK)
  • Drain-to-Source Voltage (V<sub>DS): 60V
  • Continuous Drain Current (I<sub>D): 54A
  • Power Dissipation (P<sub>D): 125W
  • R<sub>DS(on): Low on-resistance for improved efficiency
  • Gate Charge (Q<sub>g): Optimized for fast switching applications
  • Total Gate Charge (Q<sub>g): 72nC
  • Operating Temperature Range: -55°C to 175°C
  • Lead-Free, Halogen-Free, and RoHS Compliant

Applications

The NVB5426NT4G is suitable for a variety of applications, including:

  • DC/DC Converters
  • Power Management Functions
  • Motor Drives
  • Automotive Applications
  • Switching Regulators
  • Synchronous Rectification

Product Advantages

The NVB5426NT4G is designed to provide high efficiency and power density with low on-resistance and low gate charge, making it an excellent choice for power-critical designs. Its robust package and high thermal performance ensure reliability in harsh environments, while its lead-free and halogen-free construction makes it an environmentally friendly option for green applications.

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NVB5426NT4G is subjected to rigorous testing and quality control procedures to ensure it meets the requirements of the most demanding applications. Customers can trust ON Semiconductor for components that deliver consistent performance over the long term.

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