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NVB6412ANT4G

Part No NVB6412ANT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 18.2 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1084085-NVB6412ANT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVB6412ANT4G CAD Model

Description

The ON Semiconductor NVB6412ANT4G is a cutting-edge power MOSFET designed for high-efficiency power management applications. This device is a member of ON Semiconductor's portfolio of energy-efficient power solutions, and it is specifically engineered to address the demanding requirements of modern electronic circuits.

Key Features

  • Low On-Resistance: The NVB6412ANT4G boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall efficiency. This characteristic is crucial for applications where power conservation is a priority.
  • High Switching Speed: This MOSFET is designed for high-speed switching, which is essential for reducing switching losses in power conversion systems. The fast switching capability also contributes to better performance in high-frequency applications.
  • Advanced Trench Technology: Utilizing advanced trench technology, the NVB6412ANT4G offers superior performance by combining low on-resistance with high switching speeds, making it well-suited for modern, high-density power designs.
  • Robust Thermal Performance: The device is encapsulated in a highly thermal-efficient package, which ensures reliable operation even under high temperature conditions. This enhances the longevity and durability of the product.
  • Environmentally Friendly: ON Semiconductor is committed to environmental stewardship, and the NVB6412ANT4G is designed with eco-friendly materials, making it compliant with RoHS regulations.

Applications

The NVB6412ANT4G is versatile and can be used in a wide array of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motors and Motor Controls
  • Automotive Systems
  • Switch Mode Power Supplies (SMPS)

Conclusion

Overall, the ON Semiconductor NVB6412ANT4G is a powerful and reliable choice for designers looking to enhance the efficiency and performance of their power management systems. With its advanced features and robust design, it stands out as a top-tier component in the semiconductor industry. Whether for automotive, industrial, or consumer electronics, the NVB6412ANT4G is engineered to meet the rigorous demands of a wide range of applications.

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