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NVD5802NT4G

Part No NVD5802NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 16.4A/101A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 12 V
Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NVD580
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 650020-NVD5802NT4G
Ultra Librarian 3D Model Ultra Librarian NVD5802NT4G CAD Model

Description

ON Semiconductor NVD5802NT4G Overview

The NVD5802NT4G is a robust, high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is tailored for automotive applications and other high-demand systems that require efficient power management. Featuring advanced trench technology, the NVD5802NT4G offers low on-resistance and a high current handling capability, making it an ideal choice for a wide range of power applications.

Key Features

  • Low On-Resistance: The NVD5802NT4G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With its ability to handle high currents, this Power MOSFET is suitable for demanding applications that require robust power delivery and distribution.
  • Advanced Trench Technology: Utilizing cutting-edge trench technology, the NVD5802NT4G achieves superior performance metrics, including faster switching speeds and lower gate charge.
  • Thermal Management: This device is designed with an optimal thermal footprint, ensuring reliable operation even under high temperature conditions typical of automotive and industrial environments.
  • Automotive Grade: The NVD5802NT4G meets stringent automotive industry standards, making it a reliable component for vehicle power systems and other automotive electronic assemblies.

Applications

The versatile nature of the NVD5802NT4G allows it to be used in a variety of applications, including but not limited to:

  • Automotive systems such as Electric Power Steering (EPS), DC/DC converters, and motor drives
  • Power supply modules
  • High-efficiency DC-AC inverters
  • Switch-mode power supplies (SMPS)
  • Load switches and battery management systems

Product Specifications

The NVD5802NT4G is packaged in a Pb-free, RoHS compliant, and Halogen-free configuration, ensuring environmental safety and compliance with global regulations. The device operates over a wide temperature range, making it suitable for harsh operating conditions.

With ON Semiconductor's commitment to quality, the NVD5802NT4G is a reliable and efficient solution for your power management needs, providing both performance and durability in a compact form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0668 $58.6740
135+ $0.8754 $118.1790
205+ $0.8480 $173.8400
285+ $0.8207 $233.8995
365+ $0.7933 $289.5545
490+ $0.7112 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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