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NVHL020N120SC1

Part No NVHL020N120SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SICFET N-CH 1200V 103A TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202296-NVHL020N120SC1
Manufacturer onsemi
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series Automotive, AEC-Q101
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Ultra Librarian 3D Model Ultra Librarian NVHL020N120SC1 CAD Model

Description

ON Semiconductor NVHL020N120SC1 SiC MOSFET

The ON Semiconductor NVHL020N120SC1 is a state-of-the-art Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high-efficiency power conversion applications. This device offers a robust and efficient solution for engineers looking to enhance system performance in a wide range of sectors, including renewable energy, electric vehicles, and high-performance power supplies.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 1200V, the NVHL020N120SC1 is capable of handling high voltage applications, ensuring reliability and safety in power systems.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (R<sub>DS(on)) of 20 mOhm at 25°C, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: SiC technology enables faster switching speeds compared to traditional silicon devices, reducing switching losses and allowing for more compact and lighter-weight designs.
  • High-Temperature Operation: The MOSFET can operate at junction temperatures up to 175°C, providing a reliable performance in harsh environments and reducing cooling requirements.
  • Reduced Parasitic Inductances: The package design minimizes parasitic inductances, which is crucial for high-speed switching and reduces the risk of undesired oscillations.

Applications

  • Renewable energy systems such as solar inverters and wind turbines
  • Electric vehicle (EV) components including onboard chargers and DC/DC converters
  • Uninterruptible power supplies (UPS)
  • High-performance power supply units for data centers and telecommunications
  • Energy storage systems and battery management

The NVHL020N120SC1 from ON Semiconductor is a testament to the advancements in power semiconductor technology. Its high efficiency, reliability, and thermal performance make it an excellent choice for designers who are looking to push the boundaries of what's possible in power electronics. Incorporating this SiC MOSFET into your designs can lead to smaller, lighter, and more energy-efficient power solutions.

For detailed specifications and application support, ON Semiconductor provides extensive technical documentation and design resources to assist in the integration of the NVHL020N120SC1 into your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $63.8729 $63.8729
3+ $52.4085 $157.2255
4+ $50.7707 $203.0828
5+ $49.1330 $245.6650
7+ $47.4952 $332.4664
9+ $42.5820 $383.2380
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