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NVMD3P03R2G

Part No NVMD3P03R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2.34A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.34A
Maximum Rds On at Id,Vgs 85 mOhm @ 3.05A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 750pF @ 24V
Maximum Power Dissipation 730mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1084135-NVMD3P03R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVMD3P03R2G CAD Model

Description

ON Semiconductor NVMD3P03R2G - Power MOSFET

The ON Semiconductor NVMD3P03R2G is a high-performance Power MOSFET that is engineered to deliver efficient power management and conversion in a compact package. This device is specifically designed to meet the rigorous demands of modern electronic applications, offering a combination of low on-resistance, high switching speed, and robust thermal performance.

Key Features:

  • Low Threshold Voltage: The NVMD3P03R2G features a low threshold voltage, making it suitable for low voltage applications and ensuring efficient operation even at low gate voltages.
  • High Current Capability: With its ability to handle high currents, this MOSFET is ideal for power-intensive applications, providing reliable performance under demanding conditions.
  • Low On-Resistance (R<sub>DS(on)): The low on-resistance of the NVMD3P03R2G minimizes conduction losses, which enhances overall efficiency and reduces power dissipation in circuits.
  • ESD Protection: The MOSFET comes with built-in ESD protection, safeguarding the device from electrostatic discharges that can cause damage during handling and operation.
  • Thermal Management: Excellent thermal characteristics ensure that the device operates within safe temperature ranges, even under high power and high temperature conditions.
  • Space-Saving Package: Housed in a compact Micro8™ package, the NVMD3P03R2G saves valuable board space and is well-suited for space-constrained applications.

Applications:

The NVMD3P03R2G is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • LED lighting
  • Battery management systems
  • Load switching

Reliability:

ON Semiconductor is known for its commitment to quality and reliability. The NVMD3P03R2G is built to meet stringent standards, ensuring long-term reliability and performance in your electronic designs. Whether you're developing power supplies, managing batteries, or controlling motors, this Power MOSFET is a reliable choice that will help to enhance the efficiency and longevity of your products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1848 $58.2120
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,615+ $0.1432 $231.2680
2,105+ $0.1374 $289.2270
2,805+ $0.1236 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,430 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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