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NVMFD5873NLT1G

Part No NVMFD5873NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Maximum) @ Id, Vgs 13 mOhm @ 15A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1560pF @ 25V
Power - Max 3.1W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package 8-PowerTDFN
Manufacturer Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Win Source Part Number 1232726-NVMFD5873NLT1G
Manufacturer Homepage www.onsemi.com
Family Name NVMFD5873NL
Introduction Date February 13, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NVMFD5873NLT1G CAD Model

Description

ON Semiconductor NVMFD5873NLT1G Overview

The NVMFD5873NLT1G is a cutting-edge power MOSFET device from ON Semiconductor, designed to deliver high efficiency and power density in a compact footprint. This product is part of ON Semiconductor's portfolio of power management solutions, which are renowned for their reliability and performance in a wide range of electronic applications.

Key Features

  • Low RDS(on): The device offers a very low on-resistance, which translates into reduced conduction losses and improved overall efficiency. This feature is particularly beneficial in applications where power efficiency is a critical concern.
  • High Continuous Drain Current (ID): It supports a high continuous drain current, ensuring that it can handle the demands of high-power applications without performance degradation.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology is integrated into this MOSFET, providing enhanced switching performance and reduced gate charge, which further improves the efficiency of the device.
  • Single N-Channel: As a single N-Channel MOSFET, it is optimized for fast switching applications and is suitable for use in a variety of circuit configurations.
  • Environmentally Friendly: This product is RoHS compliant, meaning it adheres to strict environmental standards by avoiding the use of hazardous substances.

Applications

The NVMFD5873NLT1G is a versatile component that can be used in multiple applications, including:

  • DC-DC converters
  • Power supplies for computer servers
  • Motor drives
  • Power management for consumer electronics
  • Automotive systems

Package and Quality

The device comes in a compact, surface-mount package that is designed for optimal thermal performance and space-saving on PCBs. ON Semiconductor's commitment to quality ensures that the NVMFD5873NLT1G is manufactured to the highest standards, providing reliable and consistent performance for the end-user.

In summary, the NVMFD5873NLT1G from ON Semiconductor is a high-performance power MOSFET that offers efficiency, reliability, and environmental friendliness, making it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0416 $61.2480
70+ $1.6752 $117.2640
110+ $1.6229 $178.5190
150+ $1.5705 $235.5750
195+ $1.5181 $296.0295
255+ $1.3611 $347.0805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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