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NVMFS4C01NT3G

Part No NVMFS4C01NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 49A/319A 5DFN  /  N-Channel 30 V 49A (Ta), 319A (Tc) 3.84W (Ta), 161W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 49A (Ta), 319A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10144 pF @ 15 V
Power Dissipation (Max) 3.84W (Ta), 161W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Win Source Part Number 1082945-NVMFS4C01NT3G
Ultra Librarian 3D Model Ultra Librarian NVMFS4C01NT3G CAD Model

Description

ON Semiconductor NVMFS4C01NT3G Overview

The NVMFS4C01NT3G by ON Semiconductor is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion for a variety of applications. This MOSFET is part of ON Semiconductor's comprehensive portfolio of energy-efficient devices, reflecting the company's commitment to innovation in power electronics.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Current Rating: With a high continuous drain current (I<sub>D) capability, the NVMFS4C01NT3G is suitable for demanding power applications.
  • Power Dissipation: It has a robust power dissipation characteristic, ensuring reliable operation even under high power and temperature conditions.
  • Fast Switching Speed: The fast switching performance of the MOSFET reduces switching losses and is ideal for high-frequency power conversion systems.
  • Low Gate Charge: The low total gate charge (Q<sub>g) leads to reduced driving power requirements and simplifies gate drive design.
  • High-Avalanche Energy Rating: The device is engineered to withstand high-energy pulses in the avalanche and commutation modes, which is crucial for applications that experience unpredictable voltage transients.

Applications

This MOSFET is versatile and can be used in a range of applications, including but not limited to:

  • DC/DC Converters
  • Power Supply for CPU
  • Power Management for Servers
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications

Environmental and Quality Certifications

The NVMFS4C01NT3G is compliant with various environmental standards, ensuring its suitability for use in eco-sensitive applications. It is lead-free, halogen-free, and RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability. Additionally, the product is backed by ON Semiconductor's commitment to quality, with rigorous testing to ensure reliability and performance under various conditions.

For engineers and designers seeking a robust and efficient power MOSFET solution, the NVMFS4C01NT3G from ON Semiconductor offers a compelling blend of performance, efficiency, and reliability.

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