The NVMFS5113PLWFT1G is a cutting-edge, N-channel power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power solutions that cater to a wide range of applications, including automotive systems, power management, and high-performance computing.

Key Features

• High Current Capacity: With a continuous drain current of 100 A, this MOSFET can handle high-power applications with ease.
• Low R<sub>DS(on): The device boasts an ultra-low on-resistance of 1.1 mΩ at a gate drive of 10 V, minimizing conduction losses and improving efficiency.
• PowerSO-8FL Package: Enclosed in a compact PowerSO-8FL package, the NVMFS5113PLWFT1G is designed for space-constrained applications while offering excellent thermal performance.
• High-Temperature Operation: Capable of operating at temperatures up to 150°C, this MOSFET is suitable for demanding environments.
• Fast Switching Speed: The device is engineered for fast switching, reducing switching losses and enhancing performance in high-frequency applications.

Applications

The versatility of the NVMFS5113PLWFT1G makes it ideal for a broad spectrum of applications, including:

• DC/DC converters for server and telecom power supplies
• Motor drives for automotive applications
• Power management modules
• Synchronous rectification in power supply circuits
• High-density power modules

Environmental and Quality Certifications

ON Semiconductor ensures that the NVMFS5113PLWFT1G meets rigorous environmental and quality standards. The device is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from specific hazardous materials. Additionally, it is designed to meet or exceed industry standards for reliability and performance, making it a trustworthy component for your power management solutions.