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NVMFS5A160PLZWFT1G

Part No NVMFS5A160PLZWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 15A/100A 5DFN  /  P-Channel 60 V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 20 V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NVMFS5A160PLZWFT1GOSTR,NVMFS5A160PLZWFT1GOSCT,NVMFS5A160PLZWFT1GOSDKR,NVMFS5A160PLZWFT1G-ND
Standard Package 1,500
Win Source Part Number 973257-NVMFS5A160PLZWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5A160PLZWFT1G CAD Model

Description

Introducing the NVMFS5A160PLZWFT1G from ON Semiconductor

ON Semiconductor's NVMFS5A160PLZWFT1G is a cutting-edge power MOSFET designed to meet the rigorous demands of modern electronic applications. This high-performance, single N-Channel Trench MOSFET is engineered for optimal power efficiency and reliability. It is housed in a compact, surface-mountable SO-8FL package, making it suitable for space-constrained applications while offering excellent thermal performance.

The NVMFS5A160PLZWFT1G boasts an impressive 160V drain-to-source voltage (V<sub>DS), providing a robust platform for high-voltage operations. Its low on-resistance (R<sub>DS(on)) minimizes conduction losses, which is essential for energy-sensitive designs. With a continuous drain current (I<sub>D) of 5A, this MOSFET can handle significant power without compromising on efficiency or performance.

One of the key features of the NVMFS5A160PLZWFT1G is its low gate charge (Q<sub>G), which enhances the switching performance. This attribute, combined with the device's fast switching speed, makes it an excellent choice for high-frequency applications such as switch-mode power supplies, DC-DC converters, and motor control circuits. Its ability to switch efficiently at high speeds helps reduce energy losses and improves overall system efficiency.

The MOSFET is also characterized by its robustness against repetitive avalanche events, ensuring long-term reliability even under tough conditions. Its maximum junction temperature of 150°C allows for operation in high-temperature environments, further extending its application range.

For designers looking for a power MOSFET with a strong balance of power handling, efficiency, and thermal performance, the NVMFS5A160PLZWFT1G from ON Semiconductor is an excellent choice. Whether it's for power management in consumer electronics, automotive systems, or industrial equipment, this MOSFET is built to deliver top-notch performance where it counts.

With its advanced features and proven technology from ON Semiconductor, the NVMFS5A160PLZWFT1G represents a reliable and efficient solution for your power circuitry needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7313 $52.3878
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7164 $201.4920
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 702 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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