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NVMFS5C677NLT1G

Part No NVMFS5C677NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 3.5W (Ta), 37W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
Other Names 2156-NVMFS5C677NLT1G-OS,ONSONSNVMFS5C677NLT1G
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278211-NVMFS5C677NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C677NLT1G CAD Model

Description

ON Semiconductor NVMFS5C677NLT1G MOSFET

The ON Semiconductor NVMFS5C677NLT1G is a state-of-the-art power MOSFET designed to deliver high efficiency and performance in a wide range of applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing cutting-edge technology for power management solutions.

With a compact footprint, the NVMFS5C677NLT1G offers a continuous drain current (ID) of 70A, making it suitable for high-power density requirements. The device operates at a maximum junction temperature of 150°C, ensuring reliability and stability even under stressful conditions. It features a low on-resistance (RDS(on)) of 1.7 mΩ at 10 V, which significantly reduces conduction losses and improves overall system efficiency.

One of the key advantages of this MOSFET is its low gate charge (Qg) and capacitance (Ciss), which enable fast switching performance. This is particularly beneficial for applications such as DC/DC converters, motor drives, and power supply circuits where switching losses can be critical. The NVMFS5C677NLT1G is optimized for synchronous rectification, further enhancing its efficiency in these applications.

The device is housed in a compact 5 mm x 6 mm DFN8 package with a wettable flank, which not only saves board space but also facilitates better solder joint inspection required in automotive and high-reliability applications. The package is RoHS compliant and is designed for lead-free soldering, aligning with environmental standards and regulations.

The NVMFS5C677NLT1G MOSFET is also characterized by its robustness against repetitive avalanche events, offering designers a margin of safety in unpredictable operating conditions. This robustness, combined with its low thermal resistance, ensures long-term reliability and a reduced need for additional thermal management components.

In summary, the NVMFS5C677NLT1G from ON Semiconductor is an excellent choice for designers looking for a high-performance, efficient, and reliable N-channel MOSFET. Its features make it highly adaptable to a range of power applications, ensuring optimal performance with a focus on power density and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,560 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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