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PN2907ATF

Part No PN2907ATF
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 60V 0.8A TO92-3 / Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 625 mW Through Hole TO-92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 625 mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number PN2907
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-PN2907ATF-OS,PN2907ATFCT,PN2907ATFTR,PN2907ATF-ND
Standard Package 2,000
Win Source Part Number 1115006-PN2907ATF
Ultra Librarian 3D Model Ultra Librarian PN2907ATF CAD Model

Description

The PN2907ATF from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This versatile transistor is a reliable component for a wide range of electronic circuits, offering consistent performance and cost-effectiveness.

Key Features

  • Transistor Polarity: PNP - This indicates that the transistor is a PNP type, meaning the majority charge carriers are holes. It is commonly used in negative ground configurations.
  • Collector-Emitter Voltage (VCEO): 60V - The maximum voltage that can be safely applied from the collector to the emitter with the base open.
  • Collector-Base Voltage (VCBO): 60V - The maximum voltage that can be applied from the collector to the base of the transistor.
  • Emitter-Base Voltage (VEBO): 5V - The maximum voltage that can be applied from the emitter to the base.
  • Collector Current (IC): 800mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 625mW - The maximum amount of power that the transistor can dissipate without damage.
  • DC Current Gain (hFE): 100 to 300 - This is the ratio of the collector current to the base current in a bipolar transistor. It indicates the level of amplification that the transistor can provide.
  • Package / Case: TO-92 - A widely-used through-hole package that is easy to handle and suitable for automated assembly processes.

Applications

The PN2907ATF is suitable for a variety of applications, including but not limited to:

  • Signal amplification in audio and radio frequency (RF) circuits
  • Driver stages in hi-fi amplifiers and television circuits
  • Switching operations in industrial and consumer electronics
  • Load management in power regulation systems
  • Control circuits in embedded systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the rigorous demands of the electronics industry. The PN2907ATF transistor is designed to ensure long-term reliability and stability in your electronic projects. With ON Semiconductor's reputation for quality, you can trust this component to perform consistently in your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
535+ $0.0939 $50.2365
1,300+ $0.0770 $100.1000
2,015+ $0.0746 $150.3190
2,775+ $0.0722 $200.3550
3,585+ $0.0698 $250.2330
4,795+ $0.0626 $300.1670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 535 pcs
Order Increment : 1 pcs
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