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SBAS40-06LT1G

Part No SBAS40-06LT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Diode Configuration 1 Pair Common Anode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) (per Diode) 120mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 1 µA @ 25 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SBAS40
Other Names =SBAS40
Standard Package 30,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1283001-SBAS40-06LT1G
Ultra Librarian 3D Model Ultra Librarian SBAS40-06LT1G CAD Model

Description

ON Semiconductor SBAS40-06LT1G - Schottky Barrier Diode

The SBAS40-06LT1G is a high-performance Schottky barrier diode designed by ON Semiconductor, a leader in energy-efficient innovations. This diode is engineered to offer low forward voltage drop and fast switching capabilities, making it an excellent choice for applications requiring high efficiency and reliability. With its compact SOD-123 package, the SBAS40-06LT1G is suitable for high-density circuit designs where space is at a premium.

Key Features:

  • Low Forward Voltage Drop: The diode provides a low forward voltage drop, which enhances system efficiency by reducing power loss during operation.
  • Fast Switching Speed: Its fast switching characteristics make it ideal for high-frequency applications, contributing to reduced switching losses.
  • Reverse Voltage: The SBAS40-06LT1G can withstand a reverse voltage of up to 60V, ensuring robust performance in various applications.
  • Forward Current: It has a forward continuous current rating of 1A, suitable for a range of power requirements.
  • Low Leakage Current: Exhibiting minimal leakage current, this diode is optimized for low power consumption when in the reverse-biased state.
  • Thermal Performance: The device is designed with superior thermal performance in mind, ensuring stability and longevity even under high-temperature conditions.
  • RoHS Compliant: Complying with RoHS directives, the SBAS40-06LT1G is environmentally friendly and free from hazardous substances.
  • Package: Enclosed in a SOD-123 package, it allows for efficient space utilization in PCB design.

Applications:

The ON Semiconductor SBAS40-06LT1G is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Automotive applications
  • Power management systems
  • Reverse battery protection
  • Portable devices
  • Switching power supplies

With its combination of efficiency, speed, and compact form factor, the SBAS40-06LT1G from ON Semiconductor is an excellent choice for designers looking to enhance their power circuitry with a reliable and high-performing Schottky barrier diode.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0860 $50.3100
1,420+ $0.0706 $100.2520
2,195+ $0.0684 $150.1380
3,025+ $0.0662 $200.2550
3,910+ $0.0640 $250.2400
5,230+ $0.0574 $300.2020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180,000 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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