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SBC846BPDW1T2G

Part No SBC846BPDW1T2G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 65V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 1022423-SBC846BPDW1T2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SBC846BPDW1T2G CAD Model

Description

The ON Semiconductor SBC846BPDW1T2G is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor offers a perfect balance of efficiency and reliability, making it a preferred choice for designers and engineers looking to optimize their circuit designs.

Key Features

  • Device Type: NPN Bipolar Transistor
  • Package: SOT-363, a compact surface-mount package that saves valuable board space and allows for higher density circuit designs.
  • Collector-Emitter Voltage (Vceo): This transistor can handle voltages up to 65V, making it suitable for a variety of medium voltage applications.
  • Collector Current (Ic): It supports a continuous collector current of up to 100 mA, allowing for a broad range of uses in different electronic circuits.
  • DC Current Gain (hFE): The SBC846BPDW1T2G boasts a high DC current gain, ensuring efficient operation and signal amplification.
  • Transition Frequency (fT): With a transition frequency of 100 MHz, this transistor is capable of operating at high switching speeds, suitable for amplification and switching in RF applications.
  • Power Dissipation (Pd): It features a power dissipation of 200 mW, ensuring that it can handle moderate power levels without overheating.
  • RoHS Compliant: The SBC846BPDW1T2G is environmentally friendly and meets RoHS compliance, making it suitable for use in green products.

Applications

The ON Semiconductor SBC846BPDW1T2G is ideal for a variety of applications, including but not limited to:

  • General-purpose switching and amplification
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems
  • Power management circuits

Conclusion

Whether you're designing consumer electronics, industrial control systems, or sophisticated audio equipment, the SBC846BPDW1T2G from ON Semiconductor offers the performance and reliability needed to meet your requirements. Its combination of high voltage and current capabilities, along with its compact SOT-363 package, makes it an excellent choice for innovative and space-conscious designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3841 $51.8535
320+ $0.3152 $100.8640
495+ $0.3053 $151.1235
680+ $0.2955 $200.9400
880+ $0.2856 $251.3280
1,175+ $0.2561 $300.9175
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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