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SBC847AWT1G

Part No SBC847AWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number SBC847
Other Names SBC847AWT1GOSCT,SBC847AWT1GOSDKR,ONSONSSBC847AWT1G,SBC847AWT1G,SBC847AWT1GOSTR,2156-SBC847AWT1G-OS
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278635-SBC847AWT1G
Ultra Librarian 3D Model Ultra Librarian SBC847AWT1G CAD Model

Description

The ON Semiconductor SBC847AWT1G is a high-performance, dual PNP bipolar transistor designed to deliver reliable and efficient performance for a wide range of electronic applications. This semiconductor device is well-suited for use in signal processing, power management, and other electronic circuits that require a compact and energy-efficient solution.

Key Features

  • Transistor Type: Dual PNP Bipolar Transistor, which provides excellent amplification and switching characteristics.
  • Current Rating: Capable of handling collector currents up to 100 mA, making it suitable for moderate power applications.
  • Voltage Rating: Offers a collector-emitter voltage (VCEO) of -50V, ensuring stability and reliability in high-voltage circuits.
  • Power Dissipation: Features a total device dissipation of 200 mW, providing a good balance between power handling and thermal efficiency.
  • DC Current Gain (hFE): Exhibits a high DC current gain with a minimum hFE of 200 at 2 mA, which means it can amplify weak signals effectively.
  • Package: Comes in a small SOT-323 (SC-70) surface-mount package, which is ideal for space-constrained applications.
  • RoHS Compliant: Manufactured in compliance with RoHS standards, ensuring environmental friendliness by avoiding the use of hazardous substances.

Applications

The SBC847AWT1G is versatile and can be used in a variety of electronic circuits. Typical applications include, but are not limited to:

  • Signal amplification in audio and video equipment
  • Switching circuits in consumer electronics
  • Power management in portable devices
  • Driver stages in amplifiers
  • Voltage regulation circuits

Conclusion

ON Semiconductor's SBC847AWT1G is a robust and reliable dual PNP transistor that offers a combination of performance, efficiency, and compact design. It is an excellent choice for designers looking for a general-purpose transistor that can meet the demands of modern electronic devices. With its RoHS compliance and SOT-323 packaging, it is also a forward-thinking solution that aligns with current environmental standards and industry trends.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2785 $50.1300
440+ $0.2286 $100.5840
680+ $0.2214 $150.5520
935+ $0.2143 $200.3705
1,210+ $0.2071 $250.5910
1,620+ $0.1857 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,500 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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