The ON Semiconductor SBC847CDW1T1G is a high-performance, dual NPN bipolar junction transistor (BJT) designed to deliver reliable and efficient performance for a wide range of electronic applications. This transistor is known for its low voltage operation and is commonly used in signal processing and amplification circuits.

Key Features

• Configuration: The SBC847CDW1T1G comes in a dual NPN configuration, making it suitable for applications where two NPN transistors are required to work in tandem.
• Low Voltage Operation: It operates at low voltages, making it ideal for portable and battery-powered devices.
• Power Dissipation: With a power dissipation of 150mW, this transistor can handle moderate levels of power, suitable for a variety of electronic circuits.
• Collector-Emitter Voltage: It has a maximum collector-emitter voltage of 50V, providing a good range for many electronic applications.
• Collector Current: The maximum collector current is 100mA, allowing for sufficient current flow for signal amplification.
• DC Current Gain (hFE): It boasts a high DC current gain, which is specified at a value of 420 at a collector current of 2mA, ensuring efficient current amplification.

Applications

The SBC847CDW1T1G is versatile and can be used in a variety of electronic circuits. Its applications include:

• Audio amplifiers and pre-amplifiers
• Signal processing
• Switching applications
• Driver stages in hi-fi systems and TVs
• General purpose amplification

Package and Quality

Packaged in a SOT-363, this transistor is designed for surface mount technology (SMT), which allows for high-density PCB designs. ON Semiconductor is committed to quality and reliability, and the SBC847CDW1T1G is no exception, meeting stringent industry standards for performance.