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SGS5N60RUFDTU

Part No SGS5N60RUFDTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 8 A
Current - Collector Pulsed (Icm) 15 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 5A
Power - Max 35 W
Switching Energy 88µJ (on), 107µJ (off)
Input Type Standard
Gate Charge 16 nC
Td (on/off) @ 25°C 13ns/34ns
Test Condition 300V, 5A, 40Ohm, 15V
Reverse Recovery Time (trr) 55 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-3
Base Product Number SGS5N
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277404-SGS5N60RUFDTU
Ultra Librarian 3D Model Ultra Librarian SGS5N60RUFDTU CAD Model

Description

Product Overview: SGS5N60RUFDTU by ON Semiconductor

The SGS5N60RUFDTU is a high-performance, N-channel Field-Effect Transistor (FET) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This FET is part of the company's extensive portfolio of power management devices, specifically tailored for efficient and reliable operation in a variety of applications.

Key Features and Benefits

  • High Current Capability: The SGS5N60RUFDTU is capable of handling high currents, making it suitable for power-intensive applications.
  • Low On-Resistance (R<sub>DS(on)): Featuring a low on-resistance, this transistor ensures minimal power loss and heat generation during operation, which enhances overall efficiency and reliability.
  • Fast Switching Speed: Designed for fast switching applications, this FET can operate at high frequencies, which is essential for modern power conversion and regulation technologies.
  • Robust Thermal Performance: With an excellent thermal management design, the SGS5N60RUFDTU can maintain stable performance even under high temperature conditions.
  • High Voltage Rating: The device is rated for high breakdown voltages, allowing it to handle surges and spikes in power circuits without compromising its integrity.

Applications

The versatility of the SGS5N60RUFDTU makes it an ideal choice for a wide range of applications, including:

  • Power Supplies
  • DC-DC Converters
  • Motor Drives
  • Inverters
  • Switching Applications
  • Power Management Functions

Product Specifications

The SGS5N60RUFDTU transistor comes in a TO-220F package, which is widely used and ensures compatibility with standard mounting and heat sinking methods. Its specifications include a 600V drain-source breakdown voltage, a continuous drain current of up to 4.5A, and a 3.0 Ohm R<sub>DS(on) at 10V gate-source voltage.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the SGS5N60RUFDTU is no exception. It is designed to meet the stringent requirements of the electronic industry, ensuring long-term reliability and performance under various operating conditions. Customers can trust this product to deliver consistent performance and contribute to the efficiency and longevity of their electronic systems.

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