The SJD112T4G is a state-of-the-art Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient innovations. This high-performance component is part of ON Semiconductor's extensive portfolio of power management devices, tailored to meet the demanding requirements of modern electronic circuits.

Key Features

• Device Type: Power MOSFET
• Configuration: Single
• Package: DPAK-3 (TO-252)
• Drain-Source Voltage (V<sub>DS): 100V
• Continuous Drain Current (I<sub>D): 12A
• Power Dissipation (P<sub>D): 88W
• R<sub>DS(on): Low on-resistance for improved efficiency
• Gate Charge (Q<sub>g): Optimized for fast switching
• Operating Temperature Range: -55°C to 150°C
• RoHS Compliant: Yes

Applications

The SJD112T4G is designed for a variety of applications that require high efficiency and power density. It is particularly well-suited for:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drives
• Battery Management Systems
• Power Management in Portable and Wireless Devices
• Automotive Applications

Performance and Reliability

ON Semiconductor's SJD112T4G is engineered for performance and reliability. With its low on-resistance and optimized gate charge, the device achieves high efficiency, which is critical for reducing energy consumption and heat generation in power-intensive applications. The robust thermal characteristics and wide operating temperature range ensure stable performance under varying environmental conditions, making it a reliable choice for industrial and automotive applications.

Environmental Compliance

Adhering to the latest environmental standards, the SJD112T4G is RoHS compliant, minimizing the ecological footprint by avoiding the use of hazardous substances. ON Semiconductor is committed to providing environmentally responsible solutions without compromising on quality and performance.