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SMBT1229LT1G

Part No SMBT1229LT1G
Manufacturer ON Semiconductor
Catalog HOT - SALES and EOL Components (S)
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Manufacturer ON Semiconductor
Win Source Part Number 328258-SMBT1229LT1G
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SMBT1229LT1G CAD Model

Description

The SMBT1229LT1G is a high-performance bipolar transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to meet the stringent requirements of today's electronic devices, offering superior performance in a compact SOT-23 package. It is an ideal choice for a wide range of applications, including signal processing, power management, and amplification circuits.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, which means it's designed to pass current predominantly from the emitter to collector when a negative base current is applied.
  • Current - Collector (Ic) (Max): 800mA - The SMBT1229LT1G can handle a maximum collector current of 800mA, making it suitable for moderate power applications.
  • Voltage - Collector Emitter Breakdown (Max): 25V - With a maximum collector-emitter breakdown voltage of 25V, this transistor can be used in circuits with moderate voltage requirements.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 1V - The device has a minimum DC current gain of 120 at 150mA and 1V, indicating efficient current amplification.
  • Power - Max: 225mW - The maximum power dissipation for this transistor is 225mW, allowing for good thermal performance in a variety of applications.
  • Frequency - Transition: 100MHz - With a transition frequency of 100MHz, the SMBT1229LT1G is capable of operating at high frequencies, suitable for RF and high-speed signal applications.
  • Operating Temperature: -55°C to +150°C - The device can operate over a wide temperature range, ensuring reliability in harsh environments.
  • Package / Case: TO-236-3, SC-59, SOT-23-3 - The compact SOT-23 package is ideal for space-constrained applications and provides a small footprint on PCBs.

Applications

The SMBT1229LT1G is versatile and can be used in various applications, including but not limited to:

  • Low noise signal amplification
  • Power management circuits
  • Switching and linear amplification
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits

With its robust design and reliable performance, the SMBT1229LT1G from ON Semiconductor is an excellent choice for designers looking to enhance their electronic designs with a high-quality, versatile PNP transistor.

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Quantity Unit Price Ext. Price
7+ $8.4049 $58.8343
17+ $6.8965 $117.2405
26+ $6.6805 $173.6930
36+ $6.4645 $232.7220
47+ $6.2497 $293.7359
62+ $5.6029 $347.3798
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Availability: 30,900 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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