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SMBT35200MT1G

Part No SMBT35200MT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 35V 2A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 35V
Max Vce (sat) 310mV @ 20mA, 2A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 1.5A, 1.5V
Maximum Power Dissipation 625mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1097895-SMBT35200MT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMBT35200MT1G CAD Model

Description

ON Semiconductor SMBT35200MT1G - High-Performance Bipolar Transistor

The ON Semiconductor SMBT35200MT1G is a state-of-the-art bipolar junction transistor (BJT) designed for applications requiring high-speed switching and reliable performance. This versatile NPN transistor offers a perfect balance of efficiency and robustness, making it an ideal component for a wide range of electronic circuits. With its compact SOT-23 package, the SMBT35200MT1G is optimized for space-constrained applications, providing powerful performance in a small footprint.

Key Features

  • High Current Gain Bandwidth Product: The transistor boasts a high fT of 300 MHz, enabling fast switching speeds suitable for high-frequency operations.
  • Low Collector-Emitter Saturation Voltage: This feature ensures lower power dissipation and improved efficiency, which is critical for battery-powered devices.
  • Surface-Mount Package: The SOT-23 package is not only space-saving but also facilitates automated assembly processes, reducing manufacturing time and costs.
  • High Collector Current: With a continuous collector current (Ic) rating of 500 mA, this transistor can handle significant current loads, making it suitable for driving moderate loads.
  • Complementary PNP Type Available: For design flexibility, a complementary PNP transistor is available, allowing for the creation of complementary push-pull stages in amplifiers and switches.

Applications

The SMBT35200MT1G transistor is designed to cater to a broad spectrum of applications. Its high-speed switching capability makes it ideal for:

  • General-purpose amplification
  • Switching circuits
  • Audio amplifiers
  • Signal processing
  • Power management systems
  • Automotive modules
  • Telecommunication circuits

ON Semiconductor's commitment to quality ensures that the SMBT35200MT1G meets the stringent requirements of modern electronic devices. Whether you're designing consumer electronics, automotive systems, or industrial machinery, this NPN transistor provides the reliability and performance you need to deliver superior products to your customers.

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