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SMMBD2835LT1G

Part No SMMBD2835LT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr onsemi
Package Tape & Reel (TR)
Diode Configuration 1 Pair Common Anode
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 35 V
Current - Average Rectified (Io) (per Diode) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 30 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMBD2835
Other Names ONSONSSMMBD2835LT1G,2156-SMMBD2835LT1G-OS
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1283008-SMMBD2835LT1G
Ultra Librarian 3D Model Ultra Librarian SMMBD2835LT1G CAD Model

Description

ON Semiconductor SMMBD2835LT1G - Surface Mount Schottky Barrier Diode

The SMMBD2835LT1G is a high-performance Schottky Barrier Diode designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This diode is designed to offer fast switching speeds and low forward voltage drop, making it an ideal choice for a variety of applications in the electronics industry.

Constructed with a patented Schottky barrier technology, the SMMBD2835LT1G provides superior efficiency and reliability. It is housed in a compact SOT-23 package, which makes it suitable for high-density circuit designs. With its small footprint, this diode is an excellent choice for space-constrained applications where size and power efficiency are critical.

The SMMBD2835LT1G boasts a low forward voltage drop, typically just 385 mV at 1 A, which helps to minimize power loss and improve overall system efficiency. This feature is particularly beneficial in power-sensitive applications such as portable devices, where extending battery life is crucial.

With a peak repetitive reverse voltage of 40 V and a continuous forward current of 1 A, this diode can handle moderate power requirements with ease. Its low reverse leakage current ensures minimal power waste when the diode is in the off state, further contributing to the efficiency of the application it is used in.

The device also offers excellent thermal performance due to its power dissipation capabilities, ensuring reliability even under high operating temperatures. Additionally, the SMMBD2835LT1G is designed to withstand the harsh conditions often encountered in industrial environments, making it a robust choice for applications such as power supply, DC-DC converters, and high-frequency rectification circuits.

ON Semiconductor's commitment to environmental sustainability is reflected in the SMMBD2835LT1G's compliance with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances and suitable for use in green products.

In summary, the SMMBD2835LT1G from ON Semiconductor is a versatile and efficient Schottky Barrier Diode that offers designers a combination of high-speed switching, low power loss, and compact packaging, making it an excellent choice for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0993 $58.0905
1,420+ $0.0815 $115.7300
2,200+ $0.0789 $173.5800
3,030+ $0.0764 $231.4920
3,915+ $0.0738 $288.9270
5,240+ $0.0662 $346.8880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
In Stock: 3,000 pieces Factory Stock: 3,000 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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