ON Semiconductor SMUN5211T3 Bipolar Transistor

The SMUN5211T3 from ON Semiconductor is a high-performance bipolar junction transistor (BJT) that is designed to offer a blend of efficiency and reliability for a range of electronic applications. This versatile transistor is a part of ON Semiconductor's innovative semiconductor product line, which is renowned for its quality and performance standards.

Key Features

• Device Type: Bipolar Transistor (BJT)
• Configuration: Single NPN
• Collector-Emitter Voltage (Vceo): 50V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 625mW
• DC Current Gain (hFE): 100 to 300 at 10mA Vce
• Transition Frequency (fT): 50MHz
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

The SMUN5211T3 is designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage of 50V, which makes it suitable for moderate voltage applications. The device can handle a collector current of up to 500mA, ensuring that it can support a wide range of electronic circuits. The transistor's power dissipation is rated at 625mW, which allows it to maintain stability and performance even under challenging conditions.

With a DC current gain (hFE) range of 100 to 300, the SMUN5211T3 provides consistent amplification across various currents, making it a reliable choice for amplification needs. Its transition frequency of 50MHz indicates that this transistor can be used effectively in high-frequency applications.

The robust operating temperature range of -55°C to +150°C ensures that the SMUN5211T3 can perform reliably in a variety of environmental conditions, making it suitable for industrial and automotive applications. The compact SOT-23-3 package makes it easy to incorporate into space-constrained designs without sacrificing performance.

Overall, the SMUN5211T3 from ON Semiconductor is an excellent choice for designers looking for a general-purpose NPN transistor that offers a good balance of performance, efficiency, and thermal stability.