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SMUN5216DW1T1G

Part No SMUN5216DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.187W SOT363
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 187mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number SMUN5216
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278650-SMUN5216DW1T1G
Ultra Librarian 3D Model Ultra Librarian SMUN5216DW1T1G CAD Model

Description

ON Semiconductor SMUN5216DW1T1G - Bipolar (BJT) Transistor Array

The SMUN5216DW1T1G from ON Semiconductor is a high-performance, dual NPN and PNP bipolar junction transistor (BJT) array designed for a variety of applications that require matched transistor pairs. This device is a testament to ON Semiconductor's commitment to providing innovative semiconductor solutions with superior performance.

The SMUN5216DW1T1G features two transistors in a single package, making it ideal for space-constrained applications. The transistors are configured in a complementary NPN/PNP arrangement, which allows for their use in push-pull, amplifier, and switching circuits, providing design flexibility and efficiency.

Key specifications of the SMUN5216DW1T1G include:

  • Collector-Emitter Voltage (VCEO) for the NPN transistor is 40V, and for the PNP transistor, it is -40V.
  • Collector Current (IC) of up to 500mA for both transistors, making it capable of driving moderate loads.
  • Power dissipation of 225mW per transistor, ensuring reliable operation under typical conditions.
  • DC current gain (hFE) range from 100 to 600, providing consistent amplification across a range of operating conditions.

The device comes in a surface-mount SOT-363 package, which is not only space-saving but also compatible with automated assembly processes, reducing manufacturing costs and time. Its small form factor makes it a perfect choice for portable and compact electronic designs.

Applications for the SMUN5216DW1T1G are broad and include signal processing, power management, and control systems. It can be used in audio amplifiers, DC-DC converters, motor control circuits, and as a switch for various types of loads. The matched pair configuration is particularly useful in differential amplifier circuits where symmetry is crucial.

With its excellent performance characteristics and versatility, the SMUN5216DW1T1G from ON Semiconductor is a reliable choice for designers looking to optimize their circuit designs in terms of space, power, and functionality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,055+ $0.0547 $57.7085
2,575+ $0.0450 $115.8750
3,980+ $0.0436 $173.5280
5,480+ $0.0422 $231.2560
7,085+ $0.0408 $289.0680
9,495+ $0.0365 $346.5675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,680 pieces
MOQ: 1055 pcs
Order Increment : 1 pcs
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